Transistor contacts and methods of forming the same
US-2024395871-A1 · Nov 28, 2024 · US
US9190472B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9190472-B2 |
| Application number | US-201414293854-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 2, 2014 |
| Priority date | Aug 16, 2011 |
| Publication date | Nov 17, 2015 |
| Grant date | Nov 17, 2015 |
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Apparatuses, such as memory devices, memory cell strings, and electronic systems, and methods of forming such apparatuses are shown. One such apparatus includes a channel region that has a minority carrier lifetime that is lower at one or more end portions, than in a middle portion. Other apparatuses and methods are also disclosed.
Opening claim text (preview).
What is claimed is: 1. A memory device, comprising: an elongated silicon channel including a body region; a number of memory cell gates disposed along a length of the body region, each of the plurality of gates being separated from the body region by respective charge storage structures; wherein the elongated silicon channel further comprises a first recombination region located at a first end, and a second recombination region located at a second end, the first and second rec…
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