Memory Device Having Oxygen Control Layers And Manufacturing Method Of Same
US-2015372228-A1 · Dec 24, 2015 · US
Work function tailoring for nonvolatile memory applications
US9178151B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178151-B2 |
| Application number | US-201314078838-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 13, 2013 |
| Priority date | Jun 9, 2011 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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Abstract
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Embodiments of the invention generally relate to a resistive switching nonvolatile memory device having an interface layer structure disposed between at least one of the electrodes and a variable resistance layer formed in the nonvolatile memory device, and a method of forming the same. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players. In one configuration of the resistive switching nonvolatile memory device, the interface layer structure comprises a passivation region, an interface coupling region, and/or a variable resistance layer interface region that are configured to adjust the nonvolatile memory device's performance, such as lowering the formed device's switching currents and reducing the device's forming voltage, and reducing the performance variation from one formed device to another.
First claim
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The invention claimed is: 1. A method of forming a nonvolatile memory element, comprising: forming a first electrode layer comprising a first electrode material over a surface of a substrate; forming a first interface layer comprising a first interface material in contact with the first electrode layer; forming a second interface layer comprising a second interface material; forming a variable resistance layer comprising a variable resistance material in contact with the sec…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9178151B2 cover?
- Embodiments of the invention generally relate to a resistive switching nonvolatile memory device having an interface layer structure disposed between at least one of the electrodes and a variable resistance layer formed in the nonvolatile memory device, and a method of forming the same. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory in…
- Who is the assignee on this patent?
- Intermolecular Inc, Toshiba Kk, Sandisk 3D Llc, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H01L45/1608. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).