Data Encoding in Solid-State Storage Devices
US-2015380087-A1 · Dec 31, 2015 · US
Resistive random access memory cell having three or more resistive states
US9178148B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178148-B2 |
| Application number | US-201514636421-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 3, 2015 |
| Priority date | Jan 10, 2013 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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Abstract
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Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kOhm) in one state and very resistive (e.g., about 1 MOhm) in another state. In some embodiments, a resistance ratio between resistive states may be between 10 and 1,000 even up to 10,000. The resistive switching layers also allow establishing stable and distinct intermediate resistive states that may be assigned different data values. These layers may be configured to switching between their resistive states using fewer programming pulses than conventional systems by using specific materials, switching pluses, and resistive state threshold.
First claim
Opening claim text (preview).
What is claimed: 1. A semiconductor device comprising: a first layer operable as a first electrode; a second layer operable as a second electrode; and a third layer disposed between the first layer and the second layer, wherein the third layer is operable to switch between a first resistive state corresponding to a first resistance and a second resistive state corresponding to a second resistance different from the first resistance, wherein the third layer comprises a first…
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Physics · mapped topic
Electricity · mapped topic
- G11C11/56Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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- What does patent US9178148B2 cover?
- Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kOhm) in one …
- Who is the assignee on this patent?
- Intermolecular Inc, Toshiba Kk, Sandisk 3D Llc, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification G11C11/56. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Nov 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).