Efficient reduction of read disturb errors in NAND flash memory
US-8943263-B2 · Jan 27, 2015 · US
US9136015B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136015-B2 |
| Application number | US-201313908041-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 3, 2013 |
| Priority date | Apr 24, 2013 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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A method, in a memory including multiple analog memory cells, includes segmenting a group of the memory cells into a common section and at least first and second dedicated sections. Each dedicated section corresponds to a read threshold that is used for reading a data page to be stored in the group. Data to be stored in the group is jointly balanced over a union of the common section and the first dedicated section, and over the union of the common section and the second dedicated section, to create a balanced page such that for each respective read threshold an equal number of memory cells will be programmed to assume programming levels that are separated by the read threshold. The balanced page is stored to the common and dedicated sections, and the read thresholds are adjusted based on detecting imbalance between data values in readout results of the balanced page.
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The invention claimed is: 1. A method, comprising: receiving a plurality of data bits for storage in a memory, wherein the memory includes a plurality of pages, wherein each page of the plurality of pages includes a plurality of memory cells, and wherein each memory cell of the plurality of memory cells is configured to store multiple data bits; determining a first number of bits to modify of a first subset of the plurality of data bits; modifying the first number of bits of t…
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