Resistive-switching memory elements having improved switching characteristics

Patent metadata

Field	Value
Publication number	US-9178147-B2
Application number	US-201514619434-A
Country	US
Kind code	B2
Filing date	Feb 11, 2015
Priority date	Apr 10, 2009
Publication date	Nov 3, 2015
Grant date	Nov 3, 2015

Abstract

Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.

First claim

What is claimed:

1. A semiconductor device comprising:
a first layer operable as a first electrode;
a second layer operable as a second electrode;
a third layer disposed between the first layer and the second layer,
wherein the third layer is operable to switch between a first resistive state and a second resistive state different from the first resistive state;
wherein the third layer comprises a first portion and a second portion,
wherein the first portion comprises an…

Assignees

• Intermolecular Inc

Inventors

• Kuse Ronald J
• Chiang Tony P
• Hashim Imran

Classifications

• H01L45/1253

  Electricity · mapped topic

• H01L45/10

  Electricity · mapped topic

• H01L45/146 Primary

  Electricity · mapped topic

• H01L45/085

  Electricity · mapped topic

• H01L27/2409

  Electricity · mapped topic