Method of manufacturing a phase change memory device
US-2015364678-A1 · Dec 17, 2015 · US
Resistive memory structure
US9178143B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178143-B2 |
| Application number | US-201313952678-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 29, 2013 |
| Priority date | Jul 29, 2013 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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Abstract
Official abstract text for this publication.
A resistive memory structure including at least one reactive layer, at least one electrode, and at least one resistance-changing material is provided. The reactive layer extends along a first direction and a second direction. The electrode extends at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other. At least part of the resistance-changing material is disposed between the reactive layer and the electrode. When ions diffuse from the resistance-changing material to the reactive layer or from the reactive layer to the resistance-changing material, resistance of the resistance-changing material changes.
First claim
Opening claim text (preview).
What is claimed is: 1. A resistive memory structure comprising: at least one reactive layer extending along a first direction and a second direction; at least one electrode extending at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other; and at least one resistance-changing material, at least part of the resistance-changing material being disposed between the reactive layer and the electrode,…
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Classifications
Electricity · mapped topic
- H01L45/1253Primary
Electricity · mapped topic
Electricity · mapped topic
- H10B63/20Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9178143B2 cover?
- A resistive memory structure including at least one reactive layer, at least one electrode, and at least one resistance-changing material is provided. The reactive layer extends along a first direction and a second direction. The electrode extends at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other. At least …
- Who is the assignee on this patent?
- Ind Tech Res Inst
- What technology area does this patent fall under?
- Primary CPC classification H01L45/1253. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).