Substituted silacyclopropane precursors and their use for the deposition of silicon-containing films

Patent metadata

Field	Value
Publication number	US-9177783-B2
Application number	US-201414560517-A
Country	US
Kind code	B2
Filing date	Dec 4, 2014
Priority date	Dec 10, 2013
Publication date	Nov 3, 2015
Grant date	Nov 3, 2015

Abstract

Provided are silacyclopropane-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a silacyclopropane-based precursor and a co-reagent in various combinations.

First claim

What is claimed is:

1. A method of depositing a silicon-containing film, the method comprising:
a. exposing a substrate surface to a silicon precursor having a structure represented by:

 wherein each R, R 1 and R 2 are independently a negatively charged group or a saturated or unsaturated, linear or branched or cyclic group with 1-8 atoms selected from carbon and nitrogen, R 3-6 are each independently a saturated or unsaturated, linear or branched or cyclic group with 1-8 atoms selected from carbon and nitrogen and n ranges from 0 to 6; and
b. exposing the substrate surface to a co-reactant to provide a silicon-containing film.

2. The method of claim 1 , wherein the substrate surface is terminated with —OH, —NH 2 , or —NH functionality.

3. The method of claim 1 , wherein the co-reactant is selected from the group consisting of an oxidant, and the silicon-containing film further comprises oxygen.

4. The method of claim 3 , wherein the oxidant is selected from the group consisting Of O 2 , O 3 and H 2 O.

5. The method of claim 1 , wherein the co-reactant comprises ammonia, hydrazine or an amine, and the silicon-containing film further comprises nitrogen.

6. The method of claim 1 , wherein the method is an atomic layer deposition method.

7. The method of claim 6 , wherein exposing the substrate surface to the silicon precursor provides silyl terminations at the substrate surface, and exposing the substrate surface to a co-reactant comprises exposing the co-reactant to the silyl terminations.

8. The method of claim 1 , wherein the method is a chemical vapor deposition method.

9. The method of claim 8 , wherein exposing the substrate surface to the co-reactant and the silicon precursor occurs simultaneously.

10. The method of claim 1 , wherein the silicon precursor undergoes thermal self-decomposition at the substrate surface to form a silylene-based molecule at the substrate surface.

11. The method of claim 1 , wherein the silicon precursor is selected from the group consisting of:

wherein each of R 1-12 is each independently H, or C 1-9 linear, branched or cyclic alkyl group, and n ranges from 0 to 6.

Assignees

• Applied Materials Inc

Inventors

• Saly Mark
• Thompson David

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6903

  containing silicon · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title