Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
US9166203B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9166203-B2 |
| Application number | US-201414299168-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 9, 2014 |
| Priority date | Dec 16, 2013 |
| Publication date | Oct 20, 2015 |
| Grant date | Oct 20, 2015 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A method of fabricating a display substrate includes forming a gate electrode on a substrate, forming a gate insulating layer to cover the gate electrode, forming an active layer on the gate insulating layer, forming a metal layer on the active layer, forming a first mask pattern on the metal layer to face a first region of the active layer, forming a second mask pattern on the metal layer to face a second region and a third region of the active layer, etching the metal layer and the active layer using the first and second mask patterns as an etch mask to form a metal pattern and an active pattern, removing the first mask pattern, and etching the metal pattern using the second mask pattern as an etch mask to form a source electrode and a drain electrode.
Opening claim text (preview).
What is claimed is: 1. A method of fabricating a display substrate, comprising: forming a gate electrode on a substrate; forming a gate insulating layer to cover the gate electrode; forming an active layer on the gate insulating layer; forming a metal layer on the active layer; forming a first mask pattern on the metal layer to face a first region of the active layer; forming a second mask pattern on the metal layer to face a second region and a third region of the activ…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Related publications grouped by family.
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Answers are generated from the same data shown on this page.