Method for producing a pi-electron conjugated compound
US-9224959-B2 · Dec 29, 2015 · US
Organic transistor and method for producing the same
US9166182B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9166182-B2 |
| Application number | US-200913055303-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 29, 2009 |
| Priority date | Jul 22, 2008 |
| Publication date | Oct 20, 2015 |
| Grant date | Oct 20, 2015 |
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Abstract
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The object of the present invention is to provide an organic transistor using an organic semiconductor having excellent transistor properties, and a method for producing the organic transistor, the present invention providing, first, an organic transistor including a gate electrode (b), an insulating layer (c), an organic semiconductor layer (d) which contacts the insulating layer (c) and has a channel formation area, and source/drain electrodes (e), which are formed on (a) a substrate, wherein the organic semiconductor layer (d) contains a fluorine-based compound (surfactant), and, secondly, a method for producing an organic transistor comprising a gate electrode (b), an insulating layer (c), an organic semiconductor layer (d) which contacts the insulating layer (c) and has a channel formation area, and source/drain electrodes (e), which are formed on (a) a substrate, the method comprising: a step in which the organic semiconductor layer (d) is formed on the insulating layer (c) by printing or coating an organic semiconductor solution containing a fluorine-based surfactant; or a step in which the insulating layer (d) is formed on the organic semiconductor layer (d) containing a fluorine-based surfactant by printing or coating.
First claim
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The invention claimed is: 1. An organic transistor including a gate electrode (b), a gate insulating film (c), and an organic semiconductor layer (d) which contacts the gate insulating film, is formed by printing or coating, and has a channel formation area, and source/drain electrodes (e), which are formed on (a) a substrate, wherein the organic semiconductor layer contains a fluorinated (meth) acrylic polymer, which is made using a fluorinated (meth)acrylate as a raw material; a…
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Classifications
Electricity · mapped topic
- H01L51/0558Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9166182B2 cover?
- The object of the present invention is to provide an organic transistor using an organic semiconductor having excellent transistor properties, and a method for producing the organic transistor, the present invention providing, first, an organic transistor including a gate electrode (b), an insulating layer (c), an organic semiconductor layer (d) which contacts the insulating layer (c) and has a…
- Who is the assignee on this patent?
- Kotake Masayoshi, Kasai Masanori, Yonehara Hisatomo, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H01L51/0558. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).