Method for producing a pi-electron conjugated compound
US-9224959-B2 · Dec 29, 2015 · US
N-dopant for carbon nanotubes and graphene
US9105853B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105853-B2 |
| Application number | US-201314051869-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 11, 2013 |
| Priority date | Dec 1, 2011 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene, wherein dihydrotetraazapentacene is represented by the formula: wherein each of R1, R2, R3, and R4 comprises one of hydrogen, an alkyl group of C1 to C16 carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group and a carboxylic ester group.
First claim
Opening claim text (preview).
What is claimed is: 1. A method comprising: exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene, wherein dihydrotetraazapentacene is represented by the formula: wherein each of R1, R2, R3, and R4 comprises one of hydrogen, an alkyl group of C1 to C16 carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymet…
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Cross-Sectional Technologies · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Operations & Transport · mapped topic
Electricity · mapped topic
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- What does patent US9105853B2 cover?
- A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a …
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H01L51/0558. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).