FinFET device with epitaxial structure

Patent metadata

Field	Value
Publication number	US-9166010-B2
Application number	US-201514708985-A
Country	US
Kind code	B2
Filing date	May 11, 2015
Priority date	Aug 30, 2012
Publication date	Oct 20, 2015
Grant date	Oct 20, 2015

Abstract

A FinFET device includes a substrate, a fin, and isolation regions on either side of the fin. The device also includes sidewall spacers above the isolation regions and formed along the fin structure. A recessing trench is formed by the sidewall spacers and the fin, and an epitaxially-grown semiconductor material is formed in and above the recessing trench, forming an epitaxial structure.

First claim

What is claimed is:

1. A method comprising:
forming a first fin on a semiconductor substrate;
forming a dielectric isolation feature on the semiconductor substrate, the dielectric isolation feature having a first height;
forming a first sidewall spacer along a sidewall of the first fin, the first sidewall spacer having a second height;
removing a portion of the first fin such that a remaining portion of the first fin has a third height, wherein the first sidewall spacer and…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Kelly Andrew Joseph
• Tzng Po-Ruwe
• Chien Pei-Shan
• Tseng Wei-Hsiung

Classifications

• H10P50/242

  Electricity · mapped topic

• H10W10/17

  Electricity · mapped topic

• H10W10/014

  Electricity · mapped topic

• H10D30/797

  Electricity · mapped topic

• H10D62/021

  Electricity · mapped topic