Semiconductor device manufacturing method and semiconductor device manufactured using the same
US-2024395745-A1 · Nov 28, 2024 · US
Unit pixel of image sensor and image sensor including the same
US9159751B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9159751-B2 |
| Application number | US-201314088793-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 25, 2013 |
| Priority date | Feb 5, 2013 |
| Publication date | Oct 13, 2015 |
| Grant date | Oct 13, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A unit pixel of an image sensor includes a photoelectric conversion region, a floating diffusion region, and a transfer gate. The photoelectric conversion region is in an active region defined by an isolation region of a semiconductor substrate. The photoelectric conversion region generates electric charges corresponding to incident light. The transfer gate transfers the electric charges to the floating diffusion region, which is located in the active region. The transfer gate includes first and second portions divided relative to a reference line, and at least one of the first or second portions does not overlap the isolation region.
First claim
Opening claim text (preview).
What is claimed is: 1. A unit pixel of an image sensor, the unit pixel comprising: a photoelectric conversion region in an active region defined by an isolation region of a semiconductor substrate, the photoelectric conversion region to generate electric charges corresponding to incident light; a floating diffusion region in the active region; and a transfer gate to transfer the electric charges to the floating diffusion region, the transfer gate adjacent to the photoelectric…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9159751B2 cover?
- A unit pixel of an image sensor includes a photoelectric conversion region, a floating diffusion region, and a transfer gate. The photoelectric conversion region is in an active region defined by an isolation region of a semiconductor substrate. The photoelectric conversion region generates electric charges corresponding to incident light. The transfer gate transfers the electric charges to the…
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10F39/802. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 13 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).