Substrate comprising inorganic material that lowers the coefficient of thermal expansion (CTE) and reduces warpage

Patent metadata

Field	Value
Publication number	US-9155191-B2
Application number	US-201313967186-A
Country	US
Kind code	B2
Filing date	Aug 14, 2013
Priority date	May 31, 2013
Publication date	Oct 6, 2015
Grant date	Oct 6, 2015

Abstract

Some novel features pertain to a substrate that includes a first core layer, a second core layer laterally located to the first core layer in the substrate, a first inorganic core layer (e.g., glass, silicon, ceramic) laterally positioned between the first core layer and the second core layer, the first inorganic core layer configured to be vertically aligned with a die configured to be coupled to the substrate, and a dielectric layer covering the first core layer, the second core layer and the first inorganic core layer. In some implementations, the first inorganic core layer has a first coefficient of thermal expansion (CTE), the die has a second coefficient of thermal expansion, and the first core layer has a third coefficient of thermal expansion (CTE). The first CTE of the first inorganic core layer closely matches the second CTE of the die in order to reduce the likelihood of warpage.

First claim

What is claimed is:

1. An integrated device comprising:
a substrate including:
a first core layer comprising a first Young's Modulus;
a second core layer laterally located relative to the first core layer in the substrate;
a first inorganic core layer laterally positioned between the first core layer and the second core layer, the first inorganic core layer comprising a second Young's Modulus that is greater than the first Young Modulus, wherein the first inorganic core laye…

Assignees

• Qualcomm Inc

Inventors

• Kim Chin-Kwan

Classifications

• H10W90/725

  Electricity · mapped topic

• H10W90/724

  Electricity · mapped topic

• H10W90/701

  Electricity · mapped topic

• H10W74/117

  Electricity · mapped topic

• H10W72/877

  Electricity · mapped topic