Selective etch of silicon nitride
US-8956980-B1 · Feb 17, 2015 · US
US9153442B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9153442-B2 |
| Application number | US-201414248143-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 8, 2014 |
| Priority date | Mar 15, 2013 |
| Publication date | Oct 6, 2015 |
| Grant date | Oct 6, 2015 |
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Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.
Opening claim text (preview).
What is claimed is: 1. A method of processing a substrate, the method comprising: transferring a substrate from a holding chamber to a loading chamber through a factory interface with a first transfer device; evacuating the loading chamber such that the substrate is maintained in a vacuum environment; transferring the substrate from the evacuated loading chamber to a process chamber with a second transfer device; transferring the substrate from the process chamber to the loa…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Electricity · mapped topic
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