Temperature sensor element, method for manufacturing same, and temperature sensor

Patent metadata

Field	Value
Publication number	US-9153365-B2
Application number	US-201113639327-A
Country	US
Kind code	B2
Filing date	Apr 27, 2011
Priority date	Apr 28, 2010
Publication date	Oct 6, 2015
Grant date	Oct 6, 2015

Abstract

A temperature sensing element includes a thermistor composed of Si-base ceramics and a pair of metal electrodes bonded onto the surfaces of the thermistor. The metal electrodes contain Cr and a metal element α having a Si diffusion coefficient higher than that of Cr. A diffusion layer is formed in a bonding interface between the thermistor and each metal electrode, the diffusion layer including a silicide of the metal element α in a crystal grain boundary of the Si-base ceramics. A temperature sensor including the diffusion layers is provided. Owing to the diffusion layers, the temperature sensor ensures heat resistance and bonding reliability and enables temperature detection with high accuracy in a temperature range, in particular, of from −50° C. to 1050° C.

First claim

The invention claimed is:

1. A temperature sensing element comprising:
a thermistor that has electrical characteristics which change with temperature; and
a pair of metal electrodes that are bonded onto a surface of the thermistor,
wherein:
the thermistor is composed of Si-base ceramics including silicon nitride which is a matrix component and silicon carbide which is contained in the silicon nitride;
the pair of metal electrodes include Cr and a metal element that has a Si diffusion coefficient higher than that of Cr; and
a diffusion layer, in which a silicide of the metal element is present in a crystal grain boundary of the Si-base ceramics that configures the thermistor, is formed in an interface between the thermistor and the pair of the metal electrodes wherein the pair of the metal electrodes have a liner expansion coefficient of 11×10 −6 /° C. or less.

2. The temperature sensing element according to claim 1 , wherein,
in the diffusion layer, the silicide of the metal element and a Cr silicide are present in the crystal grain boundary of the Si-base ceramics.

3. The temperature sensing element according to claim 1 , wherein:
the temperature sensing element includes crystal grains of the silicon nitride, a crystal grain boundary composed of a glass phase which is arranged around the crystal grains, and grains of silicon carbide dispersed in the crystal grain boundary.

4. The temperature sensing element according to claim 3 , wherein
the silicide of the metal element and the Cr silicide are arranged, reacting with the grains of the silicon carbide dispersed in the crystal grain boundary.

5. The temperature sensing element according to claim 1 , wherein the metal element is Fe.

6. The temperature sensing element according to claim 1 , wherein the pair of metal electrodes are composed of an alloy that contains 30 to 90 mass % Cr and 10 to 70 mass % Fe.

7. The temperature sensing element according to claim 1 , wherein
the pair of metal electrodes have a thickness of 3 to 110 μm.

8. The temperature sensing element according to claim 1 , wherein
the diffusion layer has a thickness of 3 to 110 μm.

9. A method of manufacturing a temperature sensing element according to claim 1 , comprising:
bonding a metal electrode, which contains Cr and a metal element having a Si diffusion coefficient higher than that of Cr, to a thermistor composed of Si-base ceramics by using a step of conducting heat treatment under a condition that a metal configured by the metal electrode is located on a surface of the thermistor; and
forming a diffusion layer in which a silicide of the metal element is present by diffusing the metal element into a crystal grain boundary of the Si-base ceramics, in a bonding interface between the thermistor and the metal electrode.

10. The method of manufacturing a temperature sensing element according to claim 9 , wherein
the metal configuring the metal electrode is an alloy powder having an average grain size of 50 μm or less.

11. The method of manufacturing a temperature sensing element according to claim 9 , wherein
the heat treatment is conducted in a vacuum or in an atmosphere of an inactive gas.

12. The method of manufacturing a temperature sensing element according to claim 9 , wherein
the heat treatment is conducted with application of pressure and/or voltage.

13. A temperature sensor wherein
the temperature sensor comprises the temperature sensing element according to claim 1 .

14. The temperature sensor according to claim 13 , wherein
the temperature sensor comprises:
the temperature sensing element;
a signal line that is electrically connected to the temperature sensing element on a tip-end side and is electrically connected to an external circuit on a rear-end side; and
a sheath pin accommodating the signal lines inside.

Assignees

• Hori Tsunenobu
• Kuzuoka Kaoru
• Ogawa Chiaki
• Satou Motoki
• Yamada Katsunori
• Kobayashi Takao
• Inoguchi Kazuhiro
• Denso Corp
• Toyota Chuo Kenkyusho Kk

Inventors

• Hori Tsunenobu
• Kuzuoka Kaoru
• Ogawa Chiaki
• Satou Motoki
• Yamada Katsunori
• Kobayashi Takao
• Inoguchi Kazuhiro

Classifications

• H01C7/008 Primary

  Thermistors (H01C7/02 - H01C7/06 take precedence) · CPC title

• G01K7/22

  the element being a non-linear resistance, e.g. thermistor (G01K7/26 takes precedence) · CPC title

• H01C7/021

  formed with two or more layers · CPC title