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US9147682B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9147682-B2 |
| Application number | US-201314056649-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 17, 2013 |
| Priority date | Jan 14, 2013 |
| Publication date | Sep 29, 2015 |
| Grant date | Sep 29, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
An integrated circuit device includes a semiconductor substrate, insulation regions extending into the semiconductor substrate, and a semiconductor fin protruding above the insulation regions. The insulation regions include a first portion and a second portion, with the first portion and second portion on opposite sides of the semiconductor fin. The integrated circuit device further includes a gate stack on a top surface and sidewalls of the semiconductor fin, and a semiconductor region connected to an end of the semiconductor fin. The semiconductor region includes a first semiconductor region formed of a first semiconductor material, wherein the first semiconductor region comprise faceted top surfaces, and a second semiconductor region underlying the first semiconductor region. The second semiconductor region has a higher germanium concentration than the first semiconductor region. A fin spacer is on a sidewall of the second semiconductor region, wherein the fin spacer overlaps a portion of the insulation regions.
First claim
Opening claim text (preview).
What is claimed is: 1. An integrated circuit device comprising: a semiconductor substrate; insulation regions extending into the semiconductor substrate; a semiconductor fin protruding above the insulation regions, wherein the insulation regions comprise a first portion and a second portion, with the first portion and the second portion on opposite sides of the semiconductor fin; a silicon strip, with opposite edges of the silicon strip contacting sidewalls of the first port…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9147682B2 cover?
- An integrated circuit device includes a semiconductor substrate, insulation regions extending into the semiconductor substrate, and a semiconductor fin protruding above the insulation regions. The insulation regions include a first portion and a second portion, with the first portion and second portion on opposite sides of the semiconductor fin. The integrated circuit device further includes a …
- Who is the assignee on this patent?
- Taiwan Semiconductor Manufactoring Company Ltd, Taiwan Semiconductor Mfg
- What technology area does this patent fall under?
- Primary CPC classification H10D84/0158. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 29 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).