Mask and method for forming the same

Patent metadata

Field	Value
Publication number	US-9142806-B2
Application number	US-201314090923-A
Country	US
Kind code	B2
Filing date	Nov 26, 2013
Priority date	Jun 21, 2013
Publication date	Sep 22, 2015
Grant date	Sep 22, 2015

Abstract

A mask is disclosed. The mask includes at least one support base having at least one opening formed therein, where at least a portion of the boundary of the opening is tapered. The mask also includes at least one positioning layer disposed on the at least one support base, where at least one through opening corresponding to and aligned with the at least one opening is formed in the at least one positioning layer. In addition, at least a portion of the boundary of the through opening is tapered.

First claim

The invention claimed is:

1. A mask, comprising:
at least one support base having at least one opening formed therein, wherein at least a portion of the boundary of the opening is tapered; and
at least one positioning layer only disposed on a top surface of the at least one support base, wherein at least one through opening corresponding to and aligned with the at least one opening is formed in the at least one positioning layer, and wherein at least a portion of the boundary of the through opening is tapered.

2. The mask according to claim 1 , wherein a width of a cross section of the opening in the support base is greater than a width of a corresponding through opening in the positioning layer.

3. The mask according to claim 1 , wherein the positioning layer is a multi-layer structure, and the through openings in the multi-layer positioning layer are aligned, and a width of a cross section of the through opening in the multi-layer positioning layer increases along a direction from the positioning layer toward the support base.

4. The mask according to claim 1 , wherein the positioning layer is a continuous structure, and is disposed such that the at least one opening in the support base is aligned with the at least one through opening in the positioning layer.

5. The mask according to claim 1 , wherein the positioning layer has a plurality of separated parts, each of which is disposed such that a particular opening in the support base is aligned with a corresponding through opening in the positioning layer.

6. The mask according to claim 5 , wherein a step is formed between a top surface of the positioning layer and a top surface of the support base, which has a height difference in a longitudinal direction.

7. The mask according to claim 1 , wherein across section of each of a plurality of openings in the support base and a cross section of each of a plurality of through openings in the positioning layer is substantially arc-shaped or trapezoid.

8. The mask according to claim 1 , wherein the material of the support base comprises invar alloy.

9. The mask according to claim 1 , wherein the support base has a thickness between about 30 μm and about 60 μm.

10. The mask according to claim 1 , wherein the positioning layer has a thickness between about 4 μm and about 8 μm.

11. The mask according to claim 10 , wherein the material of the positioning layer comprises polyimide.

12. The mask according to claim 1 , wherein the at least one support base has a greater thickness, and a greater rigidity than the at least one positioning layer.

Assignees

• Xiamen Tianma Micro Electronics Co Ltd
• Tianma Micro Electronics Co Ltd

Inventors

• Ye tiansheng

Classifications

• C23C14/042

  using masks · CPC title

• C23C16/042

  using masks · CPC title

• C23F1/02

  Local etching · CPC title

• G03F1/20

  Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof · CPC title

• G03F1/50

  Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof · CPC title