Semiconductor devices comprising a fin
US-2015028389-A1 · Jan 29, 2015 · US
Method for forming a nanowire field effect transistor device having a replacement gate
US9136332B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136332-B2 |
| Application number | US-201314101715-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 10, 2013 |
| Priority date | Dec 10, 2013 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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Abstract
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A transistor device and method for forming a field effect transistor device are provided. An example transistor device includes a semiconductor substrate and a device layer. The device layer includes a source region and a drain region that are connected by a channel region that comprises a portion of a nanowire. The channel region is formed by providing a sacrificial layer over the semiconductor substrate. The nanowire is formed over the sacrificial layer, and the sacrificial layer is etched. The etching is selective to the sacrificial layer to prevent the removal of the nanowire, and the etching causes the portion of the nanowire to be suspended over the semiconductor substrate. A gate region is formed that surrounds at least the portion of the nanowire. The gate region is deposited in a conformal manner over all sides of the portion, and the portion is no longer suspended over the semiconductor substrate.
First claim
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It is claimed: 1. A method for forming a nanowire field effect transistor (FET) device, the method comprising: growing a sacrificial layer, a nanowire, and a buffer layer in a fin structure over a semiconductor substrate using an epitaxial process, wherein the buffer layer interposes between the semiconductor substrate and the sacrificial layer; forming a dummy gate around at least a portion of the nanowire, wherein the portion of the nanowire comprises a channel region of a lat…
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- B82Y10/00Primary
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9136332B2 cover?
- A transistor device and method for forming a field effect transistor device are provided. An example transistor device includes a semiconductor substrate and a device layer. The device layer includes a source region and a drain region that are connected by a channel region that comprises a portion of a nanowire. The channel region is formed by providing a sacrificial layer over the semiconducto…
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg
- What technology area does this patent fall under?
- Primary CPC classification B82Y10/00. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).