Nanoscale silicon Schottky diode array for low power phase change memory application
US-9202885-B2 · Dec 1, 2015 · US
Memory structures and arrays
US9136306B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136306-B2 |
| Application number | US-201113340375-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 29, 2011 |
| Priority date | Dec 29, 2011 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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Abstract
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Some embodiments include memory structures having a diode over a memory cell. The memory cell can include programmable material between a pair of electrodes, with the programmable material containing a multivalent metal oxide directly against a high-k dielectric. The diode can include a first diode electrode directly over one of the memory cell electrodes and electrically coupled with the memory cell electrode, and can include a second diode electrode laterally outward of the first diode electrode and not directly over the memory cell. Some embodiments include memory arrays comprising the memory structures, and some embodiments include methods of making the memory structures.
First claim
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We claim: 1. A memory structure, comprising: a memory cell having programmable material between a pair of electrodes; the programmable material comprising a multivalent metal oxide directly against a high-k dielectric; and a diode over the memory cell; the diode comprising a first diode electrode directly over one of the memory cell electrodes and electrically coupled with said one of the memory cell electrodes; the diode further comprising a second diode electrode laterally out…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9136306B2 cover?
- Some embodiments include memory structures having a diode over a memory cell. The memory cell can include programmable material between a pair of electrodes, with the programmable material containing a multivalent metal oxide directly against a high-k dielectric. The diode can include a first diode electrode directly over one of the memory cell electrodes and electrically coupled with the memor…
- Who is the assignee on this patent?
- Ramaswamy D V Nirmal, Korber Mark S, Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L27/2409. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).