Thin film transistor and manufacturing method therefor, array substrate, and display device
US-11869976-B2 · Jan 9, 2024 · US
US8940592B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8940592-B2 |
| Application number | US-201313739679-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 11, 2013 |
| Priority date | Jan 11, 2013 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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Methods of forming thin-film transistors and memories are disclosed. In one such method, polycrystalline silicon is hydrogen plasma doped to form doped polycrystalline silicon. The doped polycrystalline silicon is then annealed. The hydrogen plasma doping and the annealing are decoupled.
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What is claimed is: 1. A method of forming thin-film transistors, comprising: hydrogen plasma doping polycrystalline silicon to form doped polycrystalline silicon; annealing the doped polycrystalline silicon, wherein the hydrogen plasma doping and the annealing are decoupled; in-situ depositing a deposition material; and removing the deposition material after annealing the doped polycrystalline silicon. 2. The method of claim 1 , wherein the hydrogen p…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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