Memories and methods of forming thin-film transistors using hydrogen plasma doping

US8940592B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8940592-B2
Application numberUS-201313739679-A
CountryUS
Kind codeB2
Filing dateJan 11, 2013
Priority dateJan 11, 2013
Publication dateJan 27, 2015
Grant dateJan 27, 2015

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Abstract

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Methods of forming thin-film transistors and memories are disclosed. In one such method, polycrystalline silicon is hydrogen plasma doped to form doped polycrystalline silicon. The doped polycrystalline silicon is then annealed. The hydrogen plasma doping and the annealing are decoupled.

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What is claimed is: 1. A method of forming thin-film transistors, comprising: hydrogen plasma doping polycrystalline silicon to form doped polycrystalline silicon; annealing the doped polycrystalline silicon, wherein the hydrogen plasma doping and the annealing are decoupled; in-situ depositing a deposition material; and removing the deposition material after annealing the doped polycrystalline silicon. 2. The method of claim 1 , wherein the hydrogen p…

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What does patent US8940592B2 cover?
Methods of forming thin-film transistors and memories are disclosed. In one such method, polycrystalline silicon is hydrogen plasma doped to form doped polycrystalline silicon. The doped polycrystalline silicon is then annealed. The hydrogen plasma doping and the annealing are decoupled.
Who is the assignee on this patent?
Micron Technology Inc
What technology area does this patent fall under?
Primary CPC classification H10D30/0314. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).