Semiconductor devices including an epitaxial layer with a slanted surface

Patent metadata

Field	Value
Publication number	US-9136176-B2
Application number	US-201414318957-A
Country	US
Kind code	B2
Filing date	Jun 30, 2014
Priority date	Mar 23, 2011
Publication date	Sep 15, 2015
Grant date	Sep 15, 2015

Abstract

A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor substrate having a major axis extending horizontally;
a first gate structure and a second gate structure disposed on the semiconductor substrate;
a shallow trench isolation layer disposed in the semiconductor substrate;
a first epitaxial layer disposed in the semiconductor substrate and between the first gate structure and the second gate structure, the first epitaxial layer including a first corner, a…

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Dong Hyuk
• Shin Dongsuk
• Kim Myungsun
• Chung Hoi Sung

Classifications

• H10P50/644

  Electricity · mapped topic

• H10P50/242

  Electricity · mapped topic

• H10P70/20 Primary

  Electricity · mapped topic

• H10P14/3411

  Electricity · mapped topic

• H10P14/2925

  Electricity · mapped topic