Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
Trench formation using horn shaped spacer
US9136162B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136162-B2 |
| Application number | US-201314097617-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 5, 2013 |
| Priority date | Dec 5, 2013 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A method includes forming a mandrel layer over a target layer, and etching the mandrel layer to form mandrels. The mandrels have top widths greater than respective bottom widths, and the mandrels define a first opening in the mandrel layer. The first opening has an I-shape and includes two parallel portions and a connecting portion interconnecting the two parallel portions. Spacers are formed on sidewalls of the first opening. The spacers fill the connecting portion, wherein a center portion of each of the two parallel portions is unfilled by the spacers. Portions of the first opening that are unfilled by the spacers are extended into the target layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method comprising: forming a mandrel layer over a target layer; etching the mandrel layer to form mandrels, wherein the mandrels have top widths greater than respective bottom widths, and wherein the mandrels define a first opening in the mandrel layer, wherein the first opening has an I-shape and comprises: two parallel portions; and a connecting portion interconnecting the two parallel portions; forming spacers on sidewalls of the first opening,…
Assignees
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Classifications
Electricity · mapped topic
- H10P76/4085Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9136162B2 cover?
- A method includes forming a mandrel layer over a target layer, and etching the mandrel layer to form mandrels. The mandrels have top widths greater than respective bottom widths, and the mandrels define a first opening in the mandrel layer. The first opening has an I-shape and includes two parallel portions and a connecting portion interconnecting the two parallel portions. Spacers are formed o…
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg
- What technology area does this patent fall under?
- Primary CPC classification H10P76/4085. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).