Rapid Thermal Processing System With Cooling System
US-2024379390-A1 · Nov 14, 2024 · US
Method for manufacturing semiconductor device
US9136115B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136115-B2 |
| Application number | US-201414493748-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 23, 2014 |
| Priority date | Jun 30, 2009 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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Abstract
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An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a semiconductor device comprising the steps of: forming a first electrode over a substrate; forming an insulating film over the first electrode; forming an oxide semiconductor layer over the insulating film; performing a heat treatment on the oxide semiconductor layer in a chamber, whereby a hydrogen concentration of the oxide semiconductor layer is reduced; introducing oxygen into the chamber after the heat treatment; fo…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9136115B2 cover?
- An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed…
- Who is the assignee on this patent?
- Semiconductor Energy Lab
- What technology area does this patent fall under?
- Primary CPC classification H10P95/90. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).