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US-2024395618-A1 · Nov 28, 2024 · US
Amorphous silicon film formation method and amorphous silicon film formation apparatus
US9123782B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123782-B2 |
| Application number | US-201514656914-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 13, 2015 |
| Priority date | Apr 27, 2010 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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Abstract
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An amorphous silicon film formation method includes transferring a base in a process chamber, heating the base in the process chamber, setting a process pressure inside the process chamber, forming a seed layer on a surface of the base by flowing aminosilane-based gas in the process chamber under a process condition in which the aminosilane-based gas is not thermally decomposed and adsorbing the aminosilane-based gas onto the surface of the base, the process condition having a first temperature, and forming an amorphous silicon film on the seed layer by heating the base at a second temperature higher than the first temperature, flowing silane-based gas containing no amino group in the process chamber, and thermally decomposing the silane-based gas containing no amino group, wherein the forming of the seed layer and the forming of the amorphous silicon film are successively performed in the process chamber.
First claim
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What is claimed is: 1. An amorphous silicon film formation method comprising: transferring a base in a process chamber; heating the base in the process chamber; setting a process pressure inside the process chamber by evacuating an interior of the process chamber; forming a seed layer on a surface of the base by flowing aminosilane-based gas in the process chamber under a process condition in which the aminosilane-based gas is not thermally decomposed and adsorbing the amino…
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Classifications
Electricity · mapped topic
- H10W20/033Primary
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
- C23C16/0272Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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- What does patent US9123782B2 cover?
- An amorphous silicon film formation method includes transferring a base in a process chamber, heating the base in the process chamber, setting a process pressure inside the process chamber, forming a seed layer on a surface of the base by flowing aminosilane-based gas in the process chamber under a process condition in which the aminosilane-based gas is not thermally decomposed and adsorbing th…
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10W20/033. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).