Semiconductor device
US-2024363707-A1 · Oct 31, 2024 · US
US9123777B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123777-B2 |
| Application number | US-201314017345-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 4, 2013 |
| Priority date | Feb 19, 2013 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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Official abstract text for this publication.
A method for fabricating a micro electro device includes forming a conductive pattern on a substrate, forming an organic insulating film on a whole surface of the substrate with an organic insulating material to cover the conductive pattern, preparing a printing plate coated with an insulating film removing material, and forming a contact hole by removing a first portion of the organic insulating film through making the insulating film removing material come in contact with the first portion of the organic insulating film that corresponds to the conductive pattern, and forming a contact in the contact hole.
Opening claim text (preview).
What is claimed is: 1. A method for fabricating a micro electro device, the method comprising: forming a conductive pattern on a substrate; forming an organic insulating film on a whole surface of the substrate with an organic insulating material to cover the conductive pattern; preparing a printing plate coated with an insulating film removing material, and forming a contact hole by removing a first portion of the organic insulating film through making the insulating film rem…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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