T-shaped single diffusion barrier with single mask approach process flow

Patent metadata

Field	Value
Publication number	US-9123773-B1
Application number	US-201414461015-A
Country	US
Kind code	B1
Filing date	Aug 15, 2014
Priority date	Aug 15, 2014
Publication date	Sep 1, 2015
Grant date	Sep 1, 2015

Abstract

Methods of forming a T-shaped SBD using a single-mask process flow are disclosed. Embodiments include providing a substrate having STI regions; forming a hard mask layer over the substrate and the STI regions, the hard mask having an opening laterally separated from the STI regions; forming a recess in the substrate through the opening, the recess having a first width; forming spacers on sidewalls of the recess, with a gap therebetween; forming a trench in the substrate through the gap, the trench having a second width less than the first; removing the spacers; removing the hard mask layer; filling the trench and the recess with an oxide layer, forming a T-shaped STI region; forming another hard mask layer on a portion of the T-shaped STI region; and revealing a Fin by removing portions of the STI regions and the T-shaped STI region.

First claim

What is claimed is:

1. A method comprising:
providing a silicon substrate having a first and a second shallow trench isolation (STI) region;
forming a first hard mask layer over the silicon substrate and the first and the second STI region, the hard mask having an opening laterally separated from the first and the second STI region;
forming a recess in the silicon substrate through the opening, the recess having a first width;
forming spacers on sidewalls of the recess, with…

Assignees

• Globalfoundries Inc

Inventors

• Shen Hongliang
• Wu Fangyu
• Huang Haigou
• Wu Xusheng
• Xiao Changyong
• He Wanxum

Classifications

• H10P50/695

  Electricity · mapped topic

• H10W10/0145

  Electricity · mapped topic

• H10W10/17

  Electricity · mapped topic

• H10W10/014 Primary

  Electricity · mapped topic

• H10D30/024

  Electricity · mapped topic