Silicon carbide semiconductor device and method for manufacturing same
US-9224802-B2 · Dec 29, 2015 · US
Power semiconductor device and fabrication method thereof
US9123769B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123769-B2 |
| Application number | US-201313915810-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 12, 2013 |
| Priority date | Sep 13, 2012 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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Abstract
Official abstract text for this publication.
Provided is a power semiconductor device and a fabrication method thereof are provided. The power semiconductor device includes: a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first epitaxial layer having a higher doping concentration than the second epitaxial layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of fabricating a power semiconductor device, the method comprising: forming a first epitaxial layer on a substrate; forming a second epitaxial layer on the first epitaxial layer; entirely removing the substrate to expose the first epitaxial layer after the second epitaxial layer is formed on the first epitaxial layer; grinding a rear side of the first epitaxial layer so that a partial thickness of the first epitaxial layer remains; and formi…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10D12/032Primary
Electricity · mapped topic
- H10D12/441Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9123769B2 cover?
- Provided is a power semiconductor device and a fabrication method thereof are provided. The power semiconductor device includes: a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first epitaxial layer having a higher doping concentration than the second epitaxial layer.
- Who is the assignee on this patent?
- Magnachip Semiconductor Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D12/032. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).