Semiconductor device and method for manufacturing the same
US-2024363493-A1 · Oct 31, 2024 · US
Semiconductor device with combined passive device on chip back side
US9123735B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123735-B2 |
| Application number | US-201313955587-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 31, 2013 |
| Priority date | Jul 31, 2013 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
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Abstract
Official abstract text for this publication.
Semiconductor chips are described that combine a semiconductor device and a capacitor onto a single substrate such that the semiconductor device and the capacitor are electrically isolated from each other. In one example, a semiconductor chip includes a substrate having a first side and a second side, wherein the second side is opposite the first side. The semiconductor chip further includes a semiconductor device formed on the first side of the substrate and an electrically insulating layer formed on at least a portion of the second side of the substrate. The semiconductor chip further includes a capacitor device formed on at least a portion of the electrically insulating layer on the second side of the substrate, wherein the capacitor device is electrically insulated from the semiconductor device.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor chip comprising: a substrate including a first side and a second side, wherein the second side is opposite the first side; a semiconductor device formed on the first side of the substrate; an electrically insulating layer formed on at least a portion of the second side of the substrate; a passive device formed on at least a portion of the electrically insulating layer on the second side of the substrate, wherein the passive device is el…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9123735B2 cover?
- Semiconductor chips are described that combine a semiconductor device and a capacitor onto a single substrate such that the semiconductor device and the capacitor are electrically isolated from each other. In one example, a semiconductor chip includes a substrate having a first side and a second side, wherein the second side is opposite the first side. The semiconductor chip further includes a …
- Who is the assignee on this patent?
- Infineon Technologies Austria
- What technology area does this patent fall under?
- Primary CPC classification H10W44/601. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).