Semiconductor substrate
US-2024105512-A1 · Mar 28, 2024 · US
Method for bonding two silicon substrates, and a correspondeing system of two silicon substrates
US9123716B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9123716-B2 |
| Application number | US-201213719799-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 19, 2012 |
| Priority date | Dec 22, 2011 |
| Publication date | Sep 1, 2015 |
| Grant date | Sep 1, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently joining the first and second silicon substrates, so that the first and the second bonding surfaces lie opposite each other; and implementing a thermal treatment step to form an eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as the main component, between the first silicon substrate and the second silicon substrate, spikes which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for bonding two silicon substrates, the method comprising: providing a first silicon substrate and a second silicon substrate; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1% and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate;…
Assignees
Inventors
Classifications
Electricity · mapped topic
- H10P10/12Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9123716B2 cover?
- A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above th…
- Who is the assignee on this patent?
- Gonska Julian, Weber Heribert, Frey Jens, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10P10/12. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).