Mask layout patterns for closely spaced primitives in phase shift photolithography masks

Patent metadata

Field	Value
Publication number	US-9122169-B2
Application number	US-201113977638-A
Country	US
Kind code	B2
Filing date	Dec 29, 2011
Priority date	Dec 29, 2011
Publication date	Sep 1, 2015
Grant date	Sep 1, 2015

Abstract

Improved mask layout patterns are described for closely spaced primitives in phase shift photolithography masks. In one example, at least a portion of a photolithography mask layout is decomposed into primitives. Jogs are identified from among the primitives, the jogs being characterized by three adjacent corners. E-fields are determined for the identified jogs and are applied to synthesize an electric field at a substrate. The mask layout is corrected using the synthesized electric field and a printed wafer pattern is calculated.

First claim

What is claimed is:

1. A computer-implemented method comprising:
decomposing at least a portion of a mask layout of a photolithography mask into primitives:
identifying jogs from among the primitives, the identified jogs being characterized by three adjacent corners;
determining electric fields for the identified jogs;
applying the determined electric fields to synthesize an electric field at a substrate;
correcting the mask layout using the synthesized electric field; and
calculating a printed wafer pattern using the corrected mask layout.

2. The method of claim 1 , wherein the three adjacent corners alternate in orientation.

3. The method of claim 1 , wherein the determining the electric fields comprises determining an electric for each of the three adjacent corners of the identified jogs and subtracting the field of a center corner of each of the three adjacent corners of the identified jogs from a sum of the other two corners of each of the identified jogs to obtain a total electric field.

4. The method of claim 3 , further comprising factoring the total electric field by parameters including a physical dimension of the identified jogs.

5. The method of claim 4 , wherein the physical dimension includes a physical distance from the center corner to at least one of the other two corners.

6. The method of claim 4 , wherein the parameters include a physical distance from the center corner to each of the other two corners.

7. The method of claim 5 , further comprising factoring the total electric field by a factor that includes an exponential function in which its exponent includes a greater one of the physical distance from the center corner to one of the two corners and the physical distance from the center corner to another one of the other two corners.

8. The method of claim 1 , further comprising determining electric fields for other primitives using pre-calculated electric field values and wherein the applying the determined electric fields further comprises applying the determined electric fields for the other primitives.

9. A non-transitory computer-readable medium having instructions that, when executed by the computer, cause the computer to perform operations comprising:
decomposing at least a portion of a mask layout of a photolithography mask into primitives;
identifying jogs from among the primitives, the identified jogs being characterized by three adjacent corners;
determining electric fields for the identified jogs;
applying the determined electric fields to synthesize an electric field at a substrate;
correcting the mask layout using the synthesized electric field; and
calculating a printed wafer pattern using the corrected mask layout.

10. The medium of claim 9 , wherein the determining the electric fields comprises determining an electric for each of the three adjacent corners of the identified jogs and subtracting the field of a center corner of each of the three adjacent corners of the identified jogs from a sum of the other two corners of each of the identified jogs to obtain a total electric field.

11. The medium of claim 10 , further comprising factoring the total electric field by parameters including a physical dimension of the identified jogs.

12. A phase shift photolithography mask determined by:
decomposing at least a portion of a mask layout of a photolithography mask into primitives;
identifying jogs from among the primitives, the identified jogs being characterized by three adjacent corners;
determining electric fields for the identified jogs;
applying the determined electric fields to synthesize an electric field at a substrate;
correcting the mask layout using the synthesized electric field; and
calculating a printed wafer pattern using the corrected mask layout.

13. The mask of claim 12 , wherein the three adjacent corners alternate in orientation.

14. The mask of claim 12 , wherein the determining electric fields for the identified jogs comprises factoring the electric field for a one of the identified jogs by a factor that includes an exponential function in which its exponent includes a greater of a physical distance from a center corner to one of the other two corners and a physical distance from the center corner to another one of the other two corners.

15. The mask of claim 14 , wherein the exponent further includes a coherence factor of an illumination source to be applied to the mask.

16. A computer-implemented method comprising:
decomposing at least a portion of a mask layout of as photolithography mask into primitives;
identifying types of primitives from among the primitives;
determining electric fields for a specific type of primitive by a factor;
factoring the determined electric field for the specific type of primitive, the factor including a physical dimension related to the specific type of primitive;
applying the determined electric fields to synthesize an electric field at a substrate;
correcting the mask layout using the synthesized electric field; and
calculating a printed wafer pattern using the corrected mask layout.

17. The method of claim 16 , wherein the specific type of primitive comprises a jog, a jog being characterized by three adjacent corners.

18. The method of claim 16 , wherein the physical dimension comprises a distance to a nearby primitive.

19. The method of claim 18 , wherein the physical dimension is applied as a negative exponent that is a component of a numerator of the factor.

20. The method of claim 16 , further comprising determining electric fields for other primitives using electric field values from a library and wherein the applying the determined electric fields further comprises applying electric fields for the other primitives.

Assignees

• Hu Bin
• Singh Vivek K
• Kim Sungwon
• Oh Chulwoo
• Yavuz Mehmet E
• Intel Corp

Inventors

• Hu Bin
• Singh Vivek K
• Kim Sungwon
• Oh Chulwoo
• Yavuz Mehmet E

Classifications

• G03F1/26 Primary

  Phase shift masks [PSM]; PSM blanks; Preparation thereof · CPC title

• G03F1/68 Primary

  Preparation processes not covered by groups G03F1/20 - G03F1/50 · CPC title

• G03F1/70

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title