Method for manufacturing a silicon carbide semiconductor element
US-2015380248-A1 · Dec 31, 2015 · US
US9117751B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9117751-B2 |
| Application number | US-201314010193-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 26, 2013 |
| Priority date | Aug 22, 2005 |
| Publication date | Aug 25, 2015 |
| Grant date | Aug 25, 2015 |
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Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting a reference spectrum. The reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectrum is empirically selected for particular spectrum-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectrum-based endpoint logic. The method includes obtaining a current spectrum. The current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved. The determining is based on the reference and current spectra.
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What is claimed is: 1. A computer program product, tangibly stored on machine readable medium, the product comprising instructions operable to cause a processor to: select a reference spectrum, the reference spectrum representing a spectrum of white light reflected from a film of interest that has a thickness greater than a target thickness; obtain a current spectrum, the current spectrum being a spectrum of white light reflected from a film of interest that is on a substrate an…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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