Efficient combinatorial optimization by quantum-inspired parallel annealing in analogue memristor crossbar
US-2024419761-A1 · Dec 19, 2024 · US
US9105837B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105837-B2 |
| Application number | US-92978011-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 15, 2011 |
| Priority date | Mar 10, 2010 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Bipolar memory cells and a memory device including the same are provided, the bipolar memory cells include two bipolar memory layers having opposite programming directions. The two bipolar memory layers may be connected to each other via an intermediate electrode interposed therebetween. The two bipolar memory layers may have the same structure or opposite structures.
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What is claimed is: 1. A memory cell, comprising: a first bipolar memory layer, the first bipolar memory layer including a first base layer and a first active layer, both of the first base layer and the first active layer being formed of a first metal oxide; and a second bipolar memory layer connected to the first bipolar memory layer, the second bipolar memory layer including a second base layer and a second active layer, both of the second base layer and the second active laye…
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