Semiconductor devices having inactive fin field effect transistor (FinFET) structures and manufacturing and design methods thereof

Patent metadata

Field	Value
Publication number	US-9105744-B2
Application number	US-201213410207-A
Country	US
Kind code	B2
Filing date	Mar 1, 2012
Priority date	Mar 1, 2012
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

Semiconductor devices and manufacturing and design methods thereof are disclosed. In one embodiment, a semiconductor device includes an active FinFET disposed over a workpiece comprising a first semiconductive material, the active FinFET comprising a first fin. An electrically inactive FinFET structure is disposed over the workpiece proximate the active FinFET, the electrically inactive FinFET comprising a second fin. A second semiconductive material is disposed between the first fin and the second fin.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
providing a fin-shaped workpiece, the workpiece comprising a first semiconductive material;
forming a plurality of active fin field effect transistors (FinFETs) over the workpiece, each of the plurality of electrically active FinFET structures comprising a gate extending over the workpiece;
forming a plurality of electrically inactive FinFET structures over the workpiece proximate t…

Assignees

• Lee Tung Ying
• Guo Wen-Huei
• Chang Chih-Hao
• Chang Shou-Zen
• Taiwan Semiconductor Mfg

Inventors

• Lee Tung Ying
• Guo Wen-Huei
• Chang Chih-Hao
• Chang Shou-Zen

Classifications

• H10D30/0243

  Electricity · mapped topic

• H10D62/021

  Electricity · mapped topic

• H10D86/011 Primary

  Electricity · mapped topic

• H10D84/0158

  Electricity · mapped topic

• H10D84/834 Primary

  Electricity · mapped topic