Semiconductor device and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9105743-B2
Application number	US-201414265860-A
Country	US
Kind code	B2
Filing date	Apr 30, 2014
Priority date	Sep 30, 2010
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

The semiconductor device includes a first transistor including a first impurity layer containing boron or phosphorus, a first epitaxial layer formed above the first impurity layer, a first gate electrode formed above the first epitaxial layer with a first gate insulating film formed therebetween and first source/drain regions, and a second transistor including a second impurity layer containing boron and carbon, or arsenic or antimony, a second epitaxial layer formed above the second impurity layer, a second gate electrode formed above the second epitaxial layer with a second gate insulating film thinner than the first gate insulating film formed therebetween, and second source/drain regions.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device comprising:
forming a first impurity layer in a first region of a semiconductor substrate by implanting a first impurity of a first conductivity type in the first region;
forming a second impurity layer in a second region of the semiconductor substrate by implanting a second impurity of the first conductivity type in the second region, a diffusion constant of the second impurity being smaller than a diffusio…

Assignees

• Fujitsu Semiconductor Ltd

Inventors

• Ema Taiji
• Fujita Kazushi
• Oh Junji

Classifications

• H10P30/225

  Electricity · mapped topic

• H10P30/208

  Electricity · mapped topic

• H10P30/204

  Electricity · mapped topic

• H10W10/031 Primary

  Electricity · mapped topic

• H10W10/30

  Electricity · mapped topic