Semiconductor devices having compact footprints

Patent metadata

Field	Value
Publication number	US-9105701-B2
Application number	US-201313913968-A
Country	US
Kind code	B2
Filing date	Jun 10, 2013
Priority date	Jun 10, 2013
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

Semiconductor devices and methods for making semiconductor devices are disclosed herein. A semiconductor device configured in accordance with a particular embodiment includes a substrate having a source/drain region, an interconnect, and first and second electrodes extending between first and second sides of the substrate. The first electrode includes a first contact pad and a via extending through the substrate that connects the first contact pad with the interconnect. The second electrode includes a second contact pad and a conductive feature in the substrate that connects the second contact pad with the interconnect.

First claim

We claim:

1. A semiconductor device, comprising:
a substrate having a first side, a second side opposite the first side, and a source/drain region;
an interconnect on the substrate at the second side; and
first and second electrodes extending between the first and second sides, wherein—
the first electrode includes—
a first contact pad on the source/drain region, and
a via extending through the substrate that connects the first contact pad with the interconnect, and

th…

Assignees

• Micron Technology Inc

Inventors

• Schubert Martin F
• Odnoblyudov Vladimir
• Basceri Cem

Classifications

• H10W20/0245

  Electricity · mapped topic

• H10W20/212

  Electricity · mapped topic

• H10W70/093

  Electricity · mapped topic

• H10W90/10

  Electricity · mapped topic

• H10W70/60

  Electricity · mapped topic