Cobalt selectivity improvement in selective cobalt process sequence

US9105695B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9105695-B2
Application numberUS-201414285535-A
CountryUS
Kind codeB2
Filing dateMay 22, 2014
Priority dateMay 24, 2013
Publication dateAug 11, 2015
Grant dateAug 11, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for forming a cobalt cap, comprising: positioning a substrate within a processing chamber, wherein the substrate comprises a copper surface with a contamination layer and a dielectric surface with a plurality of exposed methyl groups; exposing the substrate to a preclean gas during an anneal process at a first temperature, wherein the plurality of exposed methyl groups are preserved and wherein the contamination layer is removed; exposing…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9105695B2 cover?
Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification H10P14/432. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).