Gradient metal liner for interconnect structures
US-2024332075-A1 · Oct 3, 2024 · US
US9105695B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105695-B2 |
| Application number | US-201414285535-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 22, 2014 |
| Priority date | May 24, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Official abstract text for this publication.
Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.
Opening claim text (preview).
The invention claimed is: 1. A method for forming a cobalt cap, comprising: positioning a substrate within a processing chamber, wherein the substrate comprises a copper surface with a contamination layer and a dielectric surface with a plurality of exposed methyl groups; exposing the substrate to a preclean gas during an anneal process at a first temperature, wherein the plurality of exposed methyl groups are preserved and wherein the contamination layer is removed; exposing…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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