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Voids in interconnect structures and methods for forming the same
US9105634B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105634-B2 |
| Application number | US-201213539121-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 29, 2012 |
| Priority date | Jun 29, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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A device includes a dielectric layer, a passive device including a portion in the dielectric layer, and a plurality of voids in the dielectric layer and encircling the passive device.
First claim
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What is claimed is: 1. A device comprising: a dielectric layer; a passive device comprising a portion in the dielectric layer, wherein the passive device comprises a Metal-Oxide-Metal (MOM) capacitor, a resistor, an inductor, a transformer, a balun, a micro-stripe, or a co-planar waveguide; a plurality of voids in the dielectric layer and encircling the passive device; a plurality of low-k dielectric layers overlying the dielectric layer; and a non-low-k dielectric layer o…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105634B2 cover?
- A device includes a dielectric layer, a passive device including a portion in the dielectric layer, and a plurality of voids in the dielectric layer and encircling the passive device.
- Who is the assignee on this patent?
- Huang Jiun-Jie, Wang Ling-Sung, Taiwan Semiconductor Mfg
- What technology area does this patent fall under?
- Primary CPC classification H10W20/495. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).