Rapid Thermal Processing System With Cooling System
US-2024379390-A1 · Nov 14, 2024 · US
US9105591B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105591-B2 |
| Application number | US-201313964150-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 12, 2013 |
| Priority date | Mar 24, 2009 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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A method for forming a layer of material on a semiconductor wafer using a semiconductor furnace that includes a thermal reaction chamber having a heating system having a plurality of rotatable heaters for providing a heating zone with uniform temperature profile is provided. The method minimizes temperature variations within the thermal reaction chamber and promotes uniform thickness of the film deposited on the wafers.
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What is claimed is: 1. A method for forming a layer of material on a semiconductor wafer comprising: (a) providing a semiconductor furnace comprising: a vertical thermal reaction chamber for processing a batch of wafers, said vertical thermal reaction chamber having a sidewall defining a height and an internal cavity for removably holding the batch of wafers; a wafer boat positionable in the vertical thermal reaction chamber and being configured and adapted to hold a plurality…
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