Methods for forming recesses in source/drain regions and devices formed thereof
US-12132089-B2 · Oct 29, 2024 · US
Etching of silicon oxide film
US9105586B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105586-B2 |
| Application number | US-7895808-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 8, 2008 |
| Priority date | Apr 13, 2007 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
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An etching method includes preparing a target object such that a first oxide film made of silicon oxide containing at least one of B and P is formed on a substrate, a second oxide film made of silicon oxide containing neither of B and P is formed on the first oxide film, and a contact portion is present below an interface between the first oxide film and the second oxide film. The etching method further includes etching the second oxide film and the first oxide film, thereby forming a hole reaching the contact portion, and etching the first oxide film by a dry process using a gas containing HF, thereby expanding a portion of the hole adjacent to an upper side of the contact portion and inside the first oxide film.
First claim
Opening claim text (preview).
What is claimed is: 1. An etching system for processing a target object prepared such that a first oxide film made of silicon oxide containing at least one of B and P is formed on a substrate, a second oxide film made of silicon oxide containing neither of B and P is formed on the first oxide film, and a contact portion is present below an interface between the first oxide film and the second oxide film, the etching system comprising: a first etching apparatus configured to etch t…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10P50/287Primary
Electricity · mapped topic
Electricity · mapped topic
- H10D64/011Primary
Electricity · mapped topic
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- What does patent US9105586B2 cover?
- An etching method includes preparing a target object such that a first oxide film made of silicon oxide containing at least one of B and P is formed on a substrate, a second oxide film made of silicon oxide containing neither of B and P is formed on the first oxide film, and a contact portion is present below an interface between the first oxide film and the second oxide film. The etching metho…
- Who is the assignee on this patent?
- Tozawa Shigeki, Muraki Yusuke, Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P50/287. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).