Manufacturing method for semiconductor structure
US-12165910-B2 · Dec 10, 2024 · US
Etching method
US9105585B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105585-B2 |
| Application number | US-201414254149-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 16, 2014 |
| Priority date | Apr 16, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Abstract
Official abstract text for this publication.
An etching method can selectively etch a second region formed of silicon oxide in a target object with respect to a first region formed of silicon in the target object. The etching method includes (a) processing the target object with plasma of a first processing gas containing fluorocarbon and fluorohydrocarbon by generating the plasma of the first processing gas with a microwave, and (b) after the processing of the target object with the plasma of the first processing gas, processing the target object with plasma of a second processing gas containing fluorocarbon by generating the plasma of the second processing gas with the microwave.
First claim
Opening claim text (preview).
We claim: 1. An etching method of selectively etching a second region formed of silicon oxide in a target object with respect to a first region formed of silicon in the target object, a side surface of the second region being in contact with a side surface of the first region, the etching method comprising: processing the target object with plasma of a first processing gas containing fluorocarbon and fluorohydrocarbon by generating the plasma of the first processing gas with a mic…
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Classifications
Electricity · mapped topic
- H10P50/283Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L21/31116Primary
Electricity · mapped topic
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- What does patent US9105585B2 cover?
- An etching method can selectively etch a second region formed of silicon oxide in a target object with respect to a first region formed of silicon in the target object. The etching method includes (a) processing the target object with plasma of a first processing gas containing fluorocarbon and fluorohydrocarbon by generating the plasma of the first processing gas with a microwave, and (b) afte…
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P50/283. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).