Semiconductor devices and methods for manufacturing the same
US-2015325703-A1 · Nov 12, 2015 · US
Methods for introducing carbon to a semiconductor structure
US9105570B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105570-B2 |
| Application number | US-201213548783-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 13, 2012 |
| Priority date | Jul 13, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
An embodiment is a method comprising diffusing carbon through a surface of a substrate, implanting carbon through the surface of the substrate, and annealing the substrate after the diffusing the carbon and implanting the carbon through the surface of the substrate. The substrate comprises a first gate, a gate spacer, an etch stop layer, and an inter-layer dielectric. The first gate is over a semiconductor substrate. The gate spacer is along a sidewall of the first gate. The etch stop layer is on a surface of the gate spacer and over a surface of the semiconductor substrate. The inter-layer dielectric is over the etch stop layer. The surface of the substrate comprises a surface of the inter-layer dielectric.
First claim
Opening claim text (preview).
What is claimed is: 1. A method comprising: diffusing carbon through a planar surface of a substrate, the substrate comprising: a first gate over a semiconductor substrate, a gate spacer along a sidewall of the first gate, an etch stop layer on a surface of the gate spacer and over a surface of the semiconductor substrate, and an inter-layer dielectric over the etch stop layer, wherein the planar surface of the substrate includes a surface of the etch stop layer and a surfa…
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Classifications
Electricity · mapped topic
- H10P30/222Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105570B2 cover?
- An embodiment is a method comprising diffusing carbon through a surface of a substrate, implanting carbon through the surface of the substrate, and annealing the substrate after the diffusing the carbon and implanting the carbon through the surface of the substrate. The substrate comprises a first gate, a gate spacer, an etch stop layer, and an inter-layer dielectric. The first gate is over a s…
- Who is the assignee on this patent?
- Su Yu-Chen, Chen Huang-Ming, Nieh Chun-Feng, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10P30/222. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).