Semiconductor device manufacturing method and semiconductor device manufactured using the same
US-2024395745-A1 · Nov 28, 2024 · US
US9105550B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105550-B2 |
| Application number | US-201414249946-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 10, 2014 |
| Priority date | Jan 11, 2013 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Official abstract text for this publication.
Novel imaging arrangements are detailed. One comprises an optical array sensor with plural photo-electron generating regions dispersed at two or more layers in the structure. Two of these photo-electron generating regions are vertically separated by at least 10 microns—making the sensor useful for sensing objects at focal distances ranging from less than ten inches, out to infinity. The photosites may be spectrally selective. One such arrangement includes a top CMOS sensor array that passes 25% or more of the visible incident light into the structure. A second CMOS sensor array can be provided at a bottom of the structure, for receiving light that was not transduced to photo-electrons elsewhere in the sensor. Another arrangement involves movement of a camera sensor, in a repetitive tracking/pop-back motion, to reduce motion blur in individual frames of a video sequence. A great number of other arrangements are also detailed.
Opening claim text (preview).
The invention claimed is: 1. A method employing a video camera system, said system including a lens coupled to a body, and an image sensor, the image sensor lying in an image plane, the method comprising the acts: sensing a uniform motion of the video camera system while capturing video imagery, said capturing of video imagery comprising the capturing of a still image frame N times a second, said uniform motion of the video camera system resulting in a uniform movement of image fe…
Electricity · mapped topic
Electricity · mapped topic
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