Semiconductor device manufacturing method and semiconductor device manufactured using the same
US-2024395745-A1 · Nov 28, 2024 · US
US9105543B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105543-B2 |
| Application number | US-201313785998-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 5, 2013 |
| Priority date | Oct 5, 2009 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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A solid-state image pickup device is provided. The first pixel isolation member includes impurity ions implanted in a first region of the semiconductor substrate so that at least two pixels are disposed between portions of the first region when viewed from a surface of the substrate. A second isolation member includes a trench having an electrocondcutive material disposed therein. The trench is formed in a second region of the substrate different from the first pixel isolation member so that the at least two pixels are disposed between portions of the second region when viewed from the surface of the semiconductor substrate.
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What is claimed is: 1. A solid-state image pickup device comprising: a semiconductor substrate including a plurality of pixels, each of the plurality of pixels including a photoelectric conversion element; a first pixel isolation member including impurity ions implanted in a first region of the semiconductor substrate so that at least two of the plurality of pixels are disposed between portions of the first region when viewed from a surface of the semiconductor substrate; and…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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