Solid-state imaging device, method of manufacturing the same, and electronic apparatus
US-8928784-B2 · Jan 6, 2015 · US
US9105539B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105539-B2 |
| Application number | US-201314372413-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 11, 2013 |
| Priority date | Jan 23, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing. A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.
Opening claim text (preview).
What is claimed is: 1. A solid-state imaging device comprising: a semiconductor substrate on which a plurality of photoelectric conversion units, each of which receives light to generate charges, are formed; a recessed portion that is formed between the photoelectric conversion units so as to be opened to a light receiving surface side of the semiconductor substrate; an insulating film which is embedded in the recessed portion and laminated on the back surface side of the semi…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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