Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures

US9105522B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9105522-B2
Application numberUS-201414485443-A
CountryUS
Kind codeB2
Filing dateSep 12, 2014
Priority dateSep 27, 2006
Publication dateAug 11, 2015
Grant dateAug 11, 2015

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Abstract

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Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.

First claim

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What is claimed is: 1. A structure comprising: a first device on a substrate, the substrate comprising a first crystalline semiconductor material; and a second device on the substrate and disposed on a second crystalline semiconductor material, the second device comprising a tunneling diode, the first device being electrically coupled to the second device, the second crystalline semiconductor material being lattice mismatched to the first crystalline semiconductor material, defe…

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What does patent US9105522B2 cover?
Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
Who is the assignee on this patent?
Taiwan Semiconductor Mfg
What technology area does this patent fall under?
Primary CPC classification H01L29/122. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).