Nanoscale emitters with polarization grading
US-9478699-B2 · Oct 25, 2016 · US
US9105522B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105522-B2 |
| Application number | US-201414485443-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 12, 2014 |
| Priority date | Sep 27, 2006 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
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What is claimed is: 1. A structure comprising: a first device on a substrate, the substrate comprising a first crystalline semiconductor material; and a second device on the substrate and disposed on a second crystalline semiconductor material, the second device comprising a tunneling diode, the first device being electrically coupled to the second device, the second crystalline semiconductor material being lattice mismatched to the first crystalline semiconductor material, defe…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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