Silicon carbide semiconductor device and method for manufacturing same
US-9224802-B2 · Dec 29, 2015 · US
Super junction semiconductor device
US9105487B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105487-B2 |
| Application number | US-201414189295-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 25, 2014 |
| Priority date | Jul 18, 2012 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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- Title
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Abstract
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A super junction semiconductor device includes a substrate layer of a first conductivity type and an epitaxial layer adjoining the substrate layer and including first columns of the first conductivity type and second columns of a second conductivity type. The first and second columns extend along a main crystal direction into the epitaxial layer and have vertical dopant profiles perpendicular to the first surface. The vertical dopant profile of at least one of the first and second columns includes first portions separated by second portions. In each of the first portions a dopant concentration varies by at most 30% of a maximum value within the respective first portion. In the second portions the dopant concentration is lower than in the adjoining first portions. A ratio of a total length of the first portions to a total length of the first and second portions is at least 50%.
First claim
Opening claim text (preview).
What is claimed is: 1. A super junction semiconductor device, comprising: a substrate layer of a first conductivity type; and an epitaxial layer adjoining the substrate layer and comprising first columns of the first conductivity type and second columns of a second conductivity type, which is the opposite of the first conductivity type, the first and second columns extending along a main crystal direction from a first surface opposite to the substrate layer into the epitaxial la…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10D12/032Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9105487B2 cover?
- A super junction semiconductor device includes a substrate layer of a first conductivity type and an epitaxial layer adjoining the substrate layer and including first columns of the first conductivity type and second columns of a second conductivity type. The first and second columns extend along a main crystal direction into the epitaxial layer and have vertical dopant profiles perpendicular t…
- Who is the assignee on this patent?
- Infineon Technologies Ag
- What technology area does this patent fall under?
- Primary CPC classification H10D12/032. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).