Sense amplifier

Patent metadata

Field	Value
Publication number	US-9105312-B2
Application number	US-201414177604-A
Country	US
Kind code	B2
Filing date	Feb 11, 2014
Priority date	Feb 17, 2012
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

A sense amplifier circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first resistive device, and a second resistive device. The first resistive device is coupled to a first data line and to a drain of the third transistor. The second resistive device is coupled to a second data line and to a drain of the fourth transistor. A terminal of the fifth transistor is coupled to the gate of the first transistor. A terminal of the sixth transistor is coupled to the gate of the second transistor.

First claim

What is claimed is:

1. A sense amplifier circuit, comprising:
a first transistor and a second transistor, the first transistor and the second transistor being transistors of a first type;
a third transistor and a fourth transistor, the third transistor and the fourth transistor being transistors of a second type;
a first resistive device;
a second resistive device;
a fifth transistor; and
a sixth transistor,
wherein
a first end of the first resistive device is coupled…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Hong Hyun-Sung

Classifications

• G11C11/4094

  Physics · mapped topic

• G11C2207/002

  Physics · mapped topic

• G11C7/065 Primary

  Physics · mapped topic

• G11C11/4091

  Physics · mapped topic

• G11C7/12

  Physics · mapped topic