Organic electronic devices with multiple solution-processed layers

Patent metadata

Field	Value
Publication number	US-9099652-B2
Application number	US-201414473995-A
Country	US
Kind code	B2
Filing date	Aug 29, 2014
Priority date	Aug 29, 2013
Publication date	Aug 4, 2015
Grant date	Aug 4, 2015

Abstract

A method of fabricating a tandem organic photosensitive device involves depositing a first layer of an organic electron donor type material film by solution-processing of the organic electron donor type material dissolved in a first solvent; depositing a first layer of an organic electron acceptor type material over the first layer of the organic electron donor type material film by a dry deposition process; depositing a conductive layer over the interim stack by a dry deposition process; depositing a second layer of the organic electron donor type material over the conductive layer by solution-processing of the organic electron donor type material dissolved in a second solvent, wherein the organic electron acceptor type material and the conductive layer are insoluble in the second solvent; depositing a second layer of an organic electron acceptor type material over the second layer of the organic electron donor type material film by a dry deposition process, resulting in a stack.

First claim

What is claimed is:

1. A method of fabricating a tandem organic photosensitive device, the method comprising:
providing a substrate;
depositing a first conductive electrode layer over the substrate;
depositing a first layer of an electron donor type small molecule material film over the substrate by solution-processing of the electron donor type small molecule material dissolved in a first solvent;
depositing a first layer of an electron acceptor type small molecule material over the first layer of the electron donor type small molecule material film by a dry deposition process, resulting in an interim stack;
depositing a conductive layer over the interim stack by a dry deposition process;
depositing a second layer of the electron donor type small molecule material film over the conductive layer by solution-processing of the electron donor type small molecule material dissolved in a second solvent, wherein the electron acceptor type small molecule material and the conductive layer are insoluble in the second solvent;
depositing a second layer of an electron acceptor type small molecule material over the second layer of the electron donor type small molecule material film by a dry deposition process, resulting in a stack; and
depositing a second conductive electrode layer over the stack.

2. The method of claim 1 , wherein the electron donor type small molecule material is functionalized squaraine, the electron acceptor type small molecule material is fullerene, the first solvent is chloroform or tetrahydrofuran, and the second solvent is tetrahydrofuran.

3. The method of claim 1 , further comprising a step of annealing the interim stack before depositing the conductive layer over the interim stack.

4. The method of claim 3 , wherein the annealing step is solvent vapor annealing or thermal annealing.

5. The method of claim 3 , further comprising a step of annealing the stack before depositing the second conductive electrode layer over the stack.

6. The method of claim 5 , wherein the annealing steps are solvent vapor annealing or thermal annealing.

7. The method of claim 4 , wherein the solvent vapor annealing consisting of exposure to a dichloromethane vapor for 5 to 10 minutes.

8. The method of claim 6 , wherein the solvent vapor annealing consisting of exposure to a dichloromethane vapor for 5 to 10 minutes.

9. The method of claim 1 , wherein the a dry deposition process is vacuum thermal evaporation process.

10. The method of claim 9 , wherein the first conductive electrode layer is an anode and the second conductive electrode layer is a cathode.

11. The method of claim 9 , wherein the conductive layer between the interim stack and the second layer of the electron donor type material film comprises a thin layer of Ag and MoO 3 .

12. The method of claim 11 , wherein the MoO 3 layer has a thickness between 5-20 nm.

13. The method of claim 9 , wherein the conductive layer is formed from PTCBI.

14. A method for fabricating a tandem organic light emitting device, the method comprising:
(a) providing a substrate;
(b) depositing a first conductive electrode layer over the substrate;
(c) depositing a first hole injection layer by a dry deposition process;
(d) depositing a first hole transport layer by a dry deposition process;
(e) depositing a first emissive layer by solution-based process of an emissive material dissolved in a first solvent;
(f) depositing an electron transport layer by a dry deposition process;
(g) depositing a first conductive interlayer by a dry deposition process;
(h) depositing a second HIL by a dry deposition process;
(i) depositing a second HTL by a dry deposition process;
(j) depositing a second emissive layer by solution-based process of the emissive material dissolved in a second solvent, wherein the electron transport layer and the conductive interlayer is insoluble in the second solvent;
(k) depositing a second electron transport layer by a dry deposition process; and
(l) depositing a second conductive interlayer by a dry deposition process.

15. The method of claim 14 , further comprising an annealing step after step (e) but before step (f).

16. The method of claim 15 , wherein the annealing step is solvent vapor annealing or thermal annealing.

17. The method of claim 14 , further comprising a second annealing step after step (j) but before step (k).

18. The method of claim 17 , wherein the annealing steps are solvent vapor annealing or thermal annealing.

19. The method of claim 14 , wherein an optional electron blocking layer is deposited by a dry deposition process after step (d) but before step (e).

20. The method of claim 14 , wherein an optional hole blocking layer is deposited by a dry deposition process after step (f) and before step (g).

21. The method of claim 14 , wherein an optional electron blocking layer is deposited by a dry deposition process after step (h) and before step (i).

22. A method for fabricating a multilayered hole injection layer in an organic light emitting device, the method comprising:
providing a substrate;
depositing a first conductive electrode layer over the substrate;
depositing an organic material as a first hole injection layer over the substrate by a solution-based process;
depositing a layer of MoO 3 by a dry deposition process, resulting in a stack; and
depositing the organic material as a second hole injection layer over the MoO 3 layer by a solution-based process.

23. The method of claim 22 , further comprising an annealing step after depositing the first hole injection layer but before depositing the MoO 3 layer.

24. The method of claim 23 , wherein the annealing step is solvent vapor annealing or thermal annealing.

25. The method of claim 23 , further comprising a second annealing step after depositing the second hole injection layer.

26. The method of claim 23 , wherein the annealing steps are solvent vapor annealing or thermal annealing.

27. The method of claim 22 , wherein the a dry deposition process is vacuum thermal evaporation process.

Assignees

• Univ Michigan

Inventors

• Forrest Stephen R
• Lassiter Brian E
• Zimmerman Jeramy D

Classifications

• H10K71/441

  in the presence of solvent vapors, e.g. solvent vapour annealing · CPC title

• H10K71/15 Primary

  characterised by the solvent used · CPC title

• H01L51/0028 Primary

  Electricity · mapped topic

• H01L27/307

  Electricity · mapped topic

• H01L51/0008

  Electricity · mapped topic