Manufacturing method for solar cell, multi-junction solar cell, solar cell module, and photovoltaic power generation system
US-2024194818-A1 · Jun 13, 2024 · US
Heterojunction photovoltaic device and fabrication method
US9099596B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9099596-B2 |
| Application number | US-201113194301-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 29, 2011 |
| Priority date | Jul 29, 2011 |
| Publication date | Aug 4, 2015 |
| Grant date | Aug 4, 2015 |
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Abstract
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A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for fabricating a photovoltaic device, comprising: forming an emitter contact on a front side of a germanium-containing substrate and a back contact on a back side of the germanium substrate wherein the step of forming includes: configuring at least one of the emitter contact and the back contact to include a doped layer in direct contact with the germanium-containing substrate, the doped layer is a single crystalline material including one of an…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9099596B2 cover?
- A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conduc…
- Who is the assignee on this patent?
- Bedell Stephen W, Fogel Keith E, Hekmatshoar-Tabari Bahman, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H10F10/161. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 04 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).