Nitride semiconductor element with selectively provided conductive layer under control electrode

Patent metadata

Field	Value
Publication number	US-9099564-B2
Application number	US-201314097342-A
Country	US
Kind code	B2
Filing date	Dec 5, 2013
Priority date	Jan 26, 2011
Publication date	Aug 4, 2015
Grant date	Aug 4, 2015

Abstract

According to one embodiment, the semiconductor element includes a semi-insulating substrate which has a first first-conductivity-type layer. The semiconductor element includes a first semiconductor layer. The first semiconductor layer contains non-doped Al X Ga 1-X N (0≦X<1). The semiconductor element includes a second semiconductor layer. The second semiconductor layer contains non-doped or second-conductivity-type Al Y Ga 1-Y N (0<Y≦1 and X<Y)). The semiconductor element includes a first major electrode and a second major electrode. The semiconductor element includes a control electrode provided on the second semiconductor layer between the major electrodes. And the first first-conductivity-type layer is provided under the control electrode.

First claim

What is claimed is:

1. A semiconductor element, comprising:
a semi-insulating substrate;
a first first-conductivity-type layer having a first conductivity type and provided selectively on a first surface of the semi-insulating substrate;
a first semiconductor layer provided on the semi-insulating substrate and the first first-conductivity-type layer, the first semiconductor layer containing Al X Ga 1-X N (0≦X<1);
a second semiconductor layer provided on the first semiconduct…

Assignees

• Toshiba Kk

Inventors

• Saito Wataru

Classifications

• H10D64/111

  Electricity · mapped topic

• H10D62/8503

  Electricity · mapped topic

• H10D64/254

  Electricity · mapped topic

• H10D62/378

  Electricity · mapped topic

• H10D62/357

  Electricity · mapped topic